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Epitaxial growth of ((11ar 20)) ZnO on ((01ar 12)) Al2O3by metalorganic chemical vapor deposition2) Al2O3by metalorganic chemical vapor deposition

โœ Scribed by S. Liang; C. R. Gorla; N. Emanetoglu; Y. Liu; W. E. Mayo; Y. Lu


Publisher
Springer US
Year
1998
Tongue
English
Weight
588 KB
Volume
27
Category
Article
ISSN
0361-5235

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## Abstract We have deposited indium oxide (In~2~O~3~) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200โ€“300 ยฐC. The films had a preferred orie