𝔖 Bobbio Scriptorium
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The growth of AlInSb by metalorganic chemical vapor deposition

✍ Scribed by R. M. Biefeld; A. A. Allerman; K. C. Baucom


Publisher
Springer US
Year
1998
Tongue
English
Weight
505 KB
Volume
27
Category
Article
ISSN
0361-5235

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## Abstract We report on the growth of unidirectional InN micropyramids by using a simple pattern‐free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be