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Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition

✍ Scribed by Jamil, Muhammad ;Xu, Tianming ;Zaidi, Tahir ;Melton, Andrew ;Jampana, Balakrishnam ;Tan, Chee-Loon ;Ooi, Boon S. ;Ferguson, Ian T.

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
512 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We report on the growth of unidirectional InN micropyramids by using a simple pattern‐free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.16Β° for the InN (0002) Ο‰ rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is ∼0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.

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