Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition
โ Scribed by Kim, Min Hwa ;Moon, Dae Young ;Park, Jinsub ;Nanishi, Yasushi ;Yi, Gyu-Chul ;Yoon, Euijoon
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 716 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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โฆ Synopsis
Abstract
We demonstrated the growth of catalystโfree InN nanostructures including nanorods on (0001) Al~2~O~3~ substrates using metalโorganic chemical vapor deposition. As the growth time increased, growth rate along cโdirection increased superlinearly with decreasing cโplane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and reโdeposition of indium at top cโplane surfaces.
๐ SIMILAR VOLUMES
## Abstract We report on the growth of unidirectional InN micropyramids by using a simple patternโfree epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be