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Metal-organic chemical vapor deposition growth of GaN

โœ Scribed by Da-chen Lu; Du Wang; Xiaohui Wang; Xianglin Liu; Jianrong Dong; Weibin Gao; Chengji Li; Yunyan Li


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
289 KB
Volume
29
Category
Article
ISSN
0921-5107

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The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de