Study of the stacking faults in a-plane
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H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang
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Article
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2011
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Elsevier Science
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English
β 596 KB
Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy