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Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

✍ Scribed by Zheng Li; Yuxuan Jiang; Tongjun Yu; Zhiyuan Yang; Yuebin Tao; Chuanyu Jia; Zhizhong Chen; Zhijian Yang; Guoyi Zhang


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
873 KB
Volume
257
Category
Article
ISSN
0169-4332

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Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy