✦ LIBER ✦

Effect of Hydrogen on GaN Growth by Remote Plasma-Enhanced Metal-Organic Chemical Vapor Deposition

✍ Scribed by Kim, Min Hong ;Kim, Hyun Jin ;Na, Hyun Seok ;Qi, Feng ;Yoon, Euijoon

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 231 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<337::aid-pssa337>3.0.co;2-i

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✦ Synopsis

The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in decreased carbon incorporation in Ga-sites. Furthermore, the GaN layer had a smooth surface with Ga polarity, whereas the layer grown without hydrogen addition showed a facetted surface with N polarity.

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