The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de
โฆ LIBER โฆ
Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition
โ Scribed by Keller, S. ;Heikman, S. ;Ben-yaacov, I. ;Shen, L. ;DenBaars, S.P. ;Mishra, U.K.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 104 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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Electroluminescence (EL) measurements of nitride-rich GaN 1--x P x single quantum well (SQW) structures, grown using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD), were performed. The maximum red shift of GaN 1--x P x to the GaN was 50 meV from the result of photoluminescence (PL)