Effect of Hydrogen on GaN Growth by Remo
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Kim, Min Hong ;Kim, Hyun Jin ;Na, Hyun Seok ;Qi, Feng ;Yoon, Euijoon
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Article
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1999
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John Wiley and Sons
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English
β 231 KB
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The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de