✦ LIBER ✦

Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation

✍ Scribed by Schmidt, O.; Eberl, K.

Book ID: 111888167
Publisher: The American Physical Society
Year: 2000
Tongue: English
Weight: 702 KB
Volume: 61
Category: Article
ISSN: 1098-0121
DOI: 10.1103/physrevb.61.13721

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photoluminescence line width of self-ass

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

✍ M. V. Shaleev; A. V. Novikov; N. A. Baydakova; A. N. Yablonskiy; O. A. Kuznetsov 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 176 KB

Effect of growth temperature on photolum

Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

✍ M. V. Shaleev; A. V. Novikov; A. N. Yablonskiĭ; O. A. Kuznetsov; Yu. N. Drozdov; 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 294 KB

Effect of tensile-strained Si layer on p

Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers

✍ M. V. Shaleev; A. V. Novikov; A. N. Yablonskiĭ; O. A. Kuznetsov; Yu. N. Drozdov; 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 255 KB

Effect of growth temperature on photolum

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

✍ M.V. Shaleev; A.V. Novikov; A.N. Yablonskiy; Y.N. Drozdov; O.A. Kuznetsov; D.N. 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 268 KB

Strain and band-edge alignment in single

Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands

✍ Schmidt, O. G.; Eberl, K.; Rau, Y. 📂 Article 📅 2000 🏛 The American Physical Society 🌐 English ⚖ 268 KB

Growth and photoluminescence of self-ass

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

✍ D.N. Lobanov; A.V. Novikov; N.V. Vostokov; Y.N. Drozdov; A.N. Yablonskiy; Z.F. K 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 367 KB

The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si 1Àx Ge x layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si 1Àx Ge x alloy increases. The increased island density is associated with an enhanced