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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

✍ Scribed by M.V. Shaleev; A.V. Novikov; A.N. Yablonskiy; Y.N. Drozdov; O.A. Kuznetsov; D.N. Lobanov; Z.F. Krasilnik

Book ID
108290198
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
268 KB
Volume
517
Category
Article
ISSN
0040-6090

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πŸ“œ SIMILAR VOLUMES

Growth and photoluminescence of self-ass
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
✍ D.N. Lobanov; A.V. Novikov; N.V. Vostokov; Y.N. Drozdov; A.N. Yablonskiy; Z.F. K πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 367 KB

The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si 1Γ€x Ge x layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si 1Γ€x Ge x alloy increases. The increased island density is associated with an enhanced