The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si 1Γx Ge x layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si 1Γx Ge x alloy increases. The increased island density is associated with an enhanced
Raman study of the strain and H2preconditioning effect on self-assembled Ge island on Si (001)
β Scribed by Lu Xu; P. J. McNally; G. D. M. Dilliway; N. E. B. Cowern; Chris Jeynes; Ernest Mendoza; Peter Ashburn; Darren M. Bagnall
- Publisher
- Springer US
- Year
- 2005
- Tongue
- English
- Weight
- 968 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0957-4522
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