✦ LIBER ✦

Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands

✍ Scribed by Schmidt, O. G.; Eberl, K.; Rau, Y.

Book ID: 120734369
Publisher: The American Physical Society
Year: 2000
Tongue: English
Weight: 268 KB
Volume: 62
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.62.16715

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interaction of self-assembled Ge islands

Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates

✍ T. I. Kamins; D. P. Basile 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 712 KB

Multiple layers of self-asssembled Ge/Si

Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation

✍ Schmidt, O.; Eberl, K. 📂 Article 📅 2000 🏛 The American Physical Society 🌐 English ⚖ 702 KB

Capacitance–voltage and admittance spect

Capacitance–voltage and admittance spectroscopy of self-assembled Ge islands in Si

✍ Miesner, C.; Asperger, T.; Brunner, K.; Abstreiter, G. 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 296 KB

Raman characterization of strain and com

Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

✍ Tan, P. H.; Brunner, K.; Bougeard, D.; Abstreiter, G. 📂 Article 📅 2003 🏛 The American Physical Society 🌐 English ⚖ 180 KB

Raman study of the strain and H2precondi

Raman study of the strain and H2preconditioning effect on self-assembled Ge island on Si (001)

✍ Lu Xu; P. J. McNally; G. D. M. Dilliway; N. E. B. Cowern; Chris Jeynes; Ernest M 📂 Article 📅 2005 🏛 Springer US 🌐 English ⚖ 968 KB

In situ transmission electron microscopy

In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si

✍ Ross, F.M.; Tersoff, J.; Reuter, M.; Legoues, F.K.; Tromp, R.M. 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 417 KB 👁 2 views

The in situ transmission electron microscope allows us to visualise processes occurring at surfaces and interfaces in real time and is therefore capable of providing detailed, quantitative information about reaction mechanisms. We have used a UHV TEM equipped with in situ growth capabilities to stud