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Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

✍ Scribed by Tan, P. H.; Brunner, K.; Bougeard, D.; Abstreiter, G.


Book ID
118005993
Publisher
The American Physical Society
Year
2003
Tongue
English
Weight
180 KB
Volume
68
Category
Article
ISSN
1098-0121

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Quantum dots of InSb, GaSb, and AlSb were grown on GaAs by molecular beam epitaxy and characterized by atomic force microscopy (AFM), photoluminescence, and Raman spectroscopy. AFM measurements reveal that InSb morphology can be a function of the initial GaAs surface reconstruction. Photoluminescenc