The challenges in guided self-assembly of Ge and InAs quantum dots on Si
โ Scribed by Z.M. Zhao; T.S. Yoon; W. Feng; B.Y. Li; J.H. Kim; J. Liu; O. Hulko; Y.H. Xie; H.M. Kim; K.B. Kim; H.J. Kim; K.L. Wang; C. Ratsch; R. Caflisch; D.Y. Ryu; T.P. Russell
- Book ID
- 108289131
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 493 KB
- Volume
- 508
- Category
- Article
- ISSN
- 0040-6090
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga
## Abstract We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl~4~ during the growth leads to the reduction of native defect concentration