๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The challenges in guided self-assembly of Ge and InAs quantum dots on Si

โœ Scribed by Z.M. Zhao; T.S. Yoon; W. Feng; B.Y. Li; J.H. Kim; J. Liu; O. Hulko; Y.H. Xie; H.M. Kim; K.B. Kim; H.J. Kim; K.L. Wang; C. Ratsch; R. Caflisch; D.Y. Ryu; T.P. Russell


Book ID
108289131
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
493 KB
Volume
508
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Self-assembled InAs quantum dots on anti
โœ W. Tantiweerasophon; S. Thainoi; P. Changmuang; S. Kanjanachuchai; S. Rattanatha ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 664 KB

The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga

Influence of matrix defects on the photo
โœ Chahboun, A. ;Baidus, N. V. ;Demina, P. B. ;Zvonkov, B. N. ;Gomes, M. J. M. ;Cav ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 161 KB

## Abstract We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl~4~ during the growth leads to the reduction of native defect concentration