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Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

✍ Scribed by M. V. Shaleev; A. V. Novikov; N. A. Baydakova; A. N. Yablonskiy; O. A. Kuznetsov; D. N. Lobanov; Z. F. Krasilnik

No coin nor oath required. For personal study only.

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