Photoluminescence of Ge(Si)/Si(0 0 1) self-assembled islands in the near infra-red wavelength range
β Scribed by A.V. Novikov; D.N. Lobanov; A.N. Yablonsky; Yu.N. Drozdov; N.V. Vostokov; Z.F. Krasilnik
- Book ID
- 104428262
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 143 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
Intense photoluminescence (PL) is observed from Ge hut clusters grown by molecular beam epitaxy on Si (0 0 1). Phononless radiative recombination results from three-dimensional carrier conΓΏnement of electrons in the surrounding tensile-strained Si and holes within the Ge hut. Post-growth annealing e
This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge=Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 β’ C. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth inter