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Influence of the Si–Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (0 0 1)

✍ Scribed by M.W Dashiell; U Denker; O.G Schmidt

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
111 KB
Volume
13
Category
Article
ISSN
1386-9477

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✦ Synopsis

Intense photoluminescence (PL) is observed from Ge hut clusters grown by molecular beam epitaxy on Si (0 0 1). Phononless radiative recombination results from three-dimensional carrier conÿnement of electrons in the surrounding tensile-strained Si and holes within the Ge hut. Post-growth annealing experiments reveal that enhanced phononless PL is due to localization of carriers at the embedded hut cluster's interface. A simple model is presented which explains the enhanced PL in terms of wave function overlap of the carriers conÿned in the type-II band alignment.

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