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Effect of phosphorus on Ge/Si(0 0 1) island formation

✍ Scribed by T.I Kamins; G Medeiros-Ribeiro; D.A.A Ohlberg; R Stanley Williams

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 177 KB
Volume: 13
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00248-5

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✦ Synopsis

Adding a phosphorus-containing species during chemical vapor deposition of Ge islands on Si(0 0 1) modiÿes the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of di erent surface facets. Three distinct island shapes occur, but the island types and their sequence of formation di er from those found with undoped Ge islands. The addition of phosphorus decreases the size of the multifaceted "domes"-the island shape that has a favored island size, providing an additional method for controlling the islands. The largest islands have a steep pyramidal structure not seen for undoped islands.

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Effect of phosphorus on Ge/Si(0&#xa0;0&#xa0;1) island formation

✦ Synopsis

Effect of phosphorus on Ge/Si(0 0 1) island formation