Shape evolution of Ge domes on Si (0 0 1) during Si capping
✍ Scribed by A Rastelli; M Kummer; H von Känel
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 426 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge=Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 • C. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth inter