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Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

✍ Scribed by M. V. Shaleev; A. V. Novikov; A. N. Yablonskiĭ; O. A. Kuznetsov; Yu. N. Drozdov; D. N. Lobanov; Z. F. Krasil’nik

Book ID: 111443917
Publisher: Springer
Year: 2007
Tongue: English
Weight: 294 KB
Volume: 41
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782607110152

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