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Morphological and structural characteristics of homoepitaxial 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor

✍ Scribed by Jae Kyeong Jeong; Hoon Joo Na; Bum Seok Kim; Myung Yoon Um; Hyeong Joon Kim

No coin nor oath required. For personal study only.

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