Molecular beam epitaxy of GaN1-xBix alloys with high bismuth content

✍ Scribed by Novikov, S. V. ;Yu, K. M. ;Levander, A. X. ;Liliental-Weber, Z. ;dos Reis, R. ;Kent, A. J. ;Tseng, A. ;Dubon, O. D. ;Wu, J. ;Denlinger, J. ;Walukiewicz, W. ;Luckert, F. ;Edwards, P. R. ;Martin, R. W. ;Foxon, C. T.

• Book ID: 105366446
• Publisher: John Wiley and Sons
• Year: 2012
• Tongue: English
• Weight: 334 KB
• Volume: 209
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201100312

✦ Synopsis

Abstract

We have analysed bismuth incorporation into GaN layers using plasma‐assisted molecular beam epitaxy (PA‐MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga‐rich and N‐rich growth conditions. The formation of amorphous GaN~1−x~Bi~x~ alloys is promoted by growth under Ga‐rich conditions. The amorphous matrix has a short‐range order resembling random crystalline GaN~1−x~Bi~x~ alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN~1−x~Bi~x~ alloys. Despite the fact that the films are pseudo‐amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.