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Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy

✍ Scribed by M. Masnadi-Shirazi; D.A. Beaton; R.B. Lewis; Xianfeng Lu; T. Tiedje

Book ID
116630049
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
927 KB
Volume
338
Category
Article
ISSN
0022-0248

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Molecular beam epitaxy of GaN1-xBix allo
Molecular beam epitaxy of GaN1-xBix alloys with high bismuth content
✍ Novikov, S. V. ;Yu, K. M. ;Levander, A. X. ;Liliental-Weber, Z. ;dos Reis, R. ;K 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 334 KB

## Abstract We have analysed bismuth incorporation into GaN layers using plasma‐assisted molecular beam epitaxy (PA‐MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga‐rich and N‐rich growth conditions. The formation of amorphous GaN~1−__x__~Bi~__x__~ alloys is promoted by