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Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

✍ Scribed by Lewis, R. B.; Masnadi-Shirazi, M.; Tiedje, T.

Book ID: 121681750
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 532 KB
Volume: 101
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4748172

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