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High-Temperature Growth of GaN and AlxGa1−xN via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

✍ Scribed by Daniel Billingsley; Walter Henderson; W. Alan Doolittle

Book ID: 107455795
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 449 KB
Volume: 39
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1102-y

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a), T. Tanabe (a), S. Kubo (a), S. Kurai (a), T. Taguchi (a), K. Kainosho (b), and A. Yokohata (b)