✦ LIBER ✦

The growth and rare-earth doping of GaN quantum dots on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy

✍ Scribed by Hori, Y. ;Andreev, T. ;Bellet-Amalric, E. ;Oda, O. ;Le Si Dang, D. ;Daudin, B.

Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 141 KB
Volume: 204
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200673542

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✦ Synopsis

Abstract

We report on the self organized growth of GaN quantum dots deposited on Al~x~ Ga~1–x~ N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al~x~ Ga~1–x~ N layer on AlN depends on Al composition and thickness. The measurement of the variation of lattice parameter indicated that GaN quantum dots do not relax completely on Al~x~ Ga~1–x~ N layer. Optical properties of undoped and Eu‐doped quantum dots on AlGaN layer were studied. Visible light emission from Eu^3+^ ions has been observed and showed strong thermal stability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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