β Scribed by Muhammad Taher Abuelma'atti
No coin nor oath required. For personal study only.
A simple empirical equation is proposed to represent the current/voltage characteristics of lambda transistors. The parameters of this model can be easily extracted from separate regions in the device characteristics.
π SIMILAR VOLUMES
A simple empirical equation is presented to relate the collector current to the collector-emitter voltage and base current of the heterostructure bipolar junction transistor (HBJT). This equation cover the entire Ic/VcE characteristics, The parameters of this model can easily be extracted from separ
## Abstract This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with selfβheating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimen
rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.