𝔖 Bobbio Scriptorium
✦   LIBER   ✦

I–V characteristics of the lambda bipolar transistor

✍ Scribed by Manju Sarkar; M. Satyam; A. Prabhakar

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
401 KB
Volume
26
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A study of static RAM cell using the lam
A study of static RAM cell using the lambda bipolar transistor (LBT)
✍ Manju Sarkar; M. Satyam; A. Prabhakar 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 531 KB

The bistable element of an SRAM cell, comprised the LBT in the common-collector configuration along with a couple of polysilicon resistors (as proposed in the literature), has been studied. Under the present study a similar case has been visualized and studied with the LBT in commonemitter configura

Modelling DC characteristics of lambda t
Modelling DC characteristics of lambda transistors for CAD
✍ Muhammad Taher Abuelma'atti 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 112 KB

A simple empirical equation is proposed to represent the current/voltage characteristics of lambda transistors. The parameters of this model can be easily extracted from separate regions in the device characteristics.

Modelling DC characteristics of heterost
Modelling DC characteristics of heterostructure bipolar junction transistors
✍ Muhammad Taher Abuelma'atti 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 175 KB

A simple empirical equation is presented to relate the collector current to the collector-emitter voltage and base current of the heterostructure bipolar junction transistor (HBJT). This equation cover the entire Ic/VcE characteristics, The parameters of this model can easily be extracted from separ