In this paper, a new functional heterostructure-emitter bipolar transistor (HEBT) with a graded Al x Ga 1-x As confinement layer and a pseudomorphic InGaAs/GaAs base structure is fabricated and demonstrated. Due to the insertion of an InGaAs quantum well (QW) between the emitter-base (E-B) junction,
โฆ LIBER โฆ
Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)
โ Scribed by Kong-Beng Thei; Jung-Hui Tsai; Wen-Chau Liu; Wen-Shiung Lour
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 454 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
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