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Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)

โœ Scribed by Kong-Beng Thei; Jung-Hui Tsai; Wen-Chau Liu; Wen-Shiung Lour


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
454 KB
Volume
39
Category
Article
ISSN
0038-1101

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๐Ÿ“œ SIMILAR VOLUMES


Functional heterostructure-emitter bipol
โœ J.-H. Tsai; S.-Y. Cheng; H.-J. Shih; W.-C. Liu ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 139 KB

In this paper, a new functional heterostructure-emitter bipolar transistor (HEBT) with a graded Al x Ga 1-x As confinement layer and a pseudomorphic InGaAs/GaAs base structure is fabricated and demonstrated. Due to the insertion of an InGaAs quantum well (QW) between the emitter-base (E-B) junction,

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In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap