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Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector

โœ Scribed by Chung-Yih Sun; Wen-Chau Liu; Der-Feng Guo; Wen-Shiung Lour; Rong-Chau Liu

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
401 KB
Volume
13
Category
Article
ISSN
0749-6036

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Investigation of an InGaP/GaAs heterostr
Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
โœ Shiou-Ying Cheng ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 297 KB

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap