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A new GaAs bipolar transistor with a doping-superlattice collector

✍ Scribed by Chung-Yih Sun; Wen-Chau Liu

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
857 KB
Volume
35
Category
Article
ISSN
0038-1101

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✍ Zheng Zeng; Ming Qi; Haitao Zhang; Jinsheng Luo πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 155 KB

In this paper, the heavily carbon doped \(\mathrm{GaAs} / \mathrm{In}_{\mathbf{x}} \mathrm{Ga}_{1-\mathbf{x}}\) As strained-Layer superlattice (SLS) is proposed as a base material of a heterojunction bipolar transistor (HBT) to increase the hole concentration and decrease the interface defects. The