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A new GaAs/Ga1−xAlxAs superlattice transistor grown by molecular beam epitaxy

✍ Scribed by F. Alexandre; J.C. Harmand; J.L. Lievin; C. Dubon-Chevallier; D. Ankri; C. Minot; J.F. Palmier


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
397 KB
Volume
81
Category
Article
ISSN
0022-0248

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