✦ LIBER ✦

Raman scattering study of heavily Si-doped GaAs-Ga1−xAlxAs superlattices grown by molecular beam epitaxy

✍ Scribed by D. Kirillov; C. Webb; J.N. Eckstein

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A new GaAs/Ga1−xAlxAs superlattice trans

✍ F. Alexandre; J.C. Harmand; J.L. Lievin; C. Dubon-Chevallier; D. Ankri; C. Minot 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 397 KB

The effect of As/Ga flux ratio on Si-dop

✍ D.H. Zhang; K. Radhakrishnan; S.F. Yoon 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 476 KB

Influence of As4/Ga flux ratio on Be inc

✍ Y.C. Pao; J. Franklin; J.S. Harris Jr. 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 284 KB

Raman scattering analysis of InAs/GaSb u

✍ Mitsuaki Yano; Hiroshi Furuse; Yoshio Iwai; Kanji Yoh; Masataka Inoue 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 441 KB

Diffusion of Si-acceptor in δ-doped GaAs

✍ M. Hirai; H. Ohnishi; K. Fujita; P. Vaccaro; T. Watanabe 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 389 KB

Electronic properties of multiple Si δ-d

✍ S.M. Shibili; A.B. Henriques; C.A.C. Mendonça; E.C.F. da Silva; E.A. Meneses; L. 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 241 KB