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GaxIn1−xP/GaAs grown by gas source molecular beam epitaxy using phosphine

✍ Scribed by Akira Takamori; Tatsuo Yokotsuka; Kiyoshi Uchiyama; Masato Nakajima


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
817 KB
Volume
108
Category
Article
ISSN
0022-0248

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