Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP

✍ Scribed by T.J. de Lyon; N.I. Buchan; P.D. Kirchner; J.M. Woodall; D.T. McInturff; G.J. Scilla; F. Cardone

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 571 KB
• Volume: 111
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(91)91040-h