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Carbon doping of GaAs for heterojunction bipolar transistors: a comparison between MBE and CBE

✍ Scribed by J.L. Benchimol; F. Alexandre; N. Jourdan; A.M. Pougnet; R. Mellet; B. Sermage; F. Héliot; C. Dubon-Chevallier

No coin nor oath required. For personal study only.

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