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Precise control of lattice strain in carbon-doped GaAs by indium co-doping for reliable AlGaAs/GaAs heterojunction bipolar transistors

✍ Scribed by Noriyuki Watanabe; Takumi Nittono; Hiroshi Ito


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
435 KB
Volume
145
Category
Article
ISSN
0022-0248

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