Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
✍ Scribed by Shiou-Ying Cheng
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 297 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap p-type GaAs base layer. In the collector-base structure, an undoped 30 Å-thick GaAs spacer and a heavily doped 30 Å-thick GaAs are inserted between the base and collector. Due to the absence of a potential spike both at the base-emitter and base-collector junctions, the studied device shows lower offset and saturation voltages. In addition, not only are the excellent current-voltage characteristics observed, but also the undesired effects, e.g. the electron blocking effect, are completely eliminated.