Investigation of heterostructure-confinement-emitter transistors
โ Scribed by Wen-Shiung Lour; Wen-Chau Liu; Yeong-Her Wang
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 869 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0038-1101
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๐ SIMILAR VOLUMES
In this paper, a new functional heterostructure-emitter bipolar transistor (HEBT) with a graded Al x Ga 1-x As confinement layer and a pseudomorphic InGaAs/GaAs base structure is fabricated and demonstrated. Due to the insertion of an InGaAs quantum well (QW) between the emitter-base (E-B) junction,
In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap