Investigation of an AlInAs/GaInAs superl
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S.-Y. Cheng; W.-L. Chang; W.-C. Liu; W. Lin
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Article
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1997
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Elsevier Science
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English
โ 118 KB
A new bipolar transistor with a 20-period i-AlInAs/n + -InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effec