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Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

✍ Scribed by S.-Y. Cheng; W.-L. Chang; W.-C. Liu; W. Lin

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 118 KB
Volume: 22
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1997.0465

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✦ Synopsis

A new bipolar transistor with a 20-period i-AlInAs/n + -InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (∼90 mV) is achieved at room temperature.

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