Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)

✍ Scribed by Wei-Chou Wang; Hsi-Jen Pan; Kun-Wei Lin; Kuo-Hui Yu; Cheng-Zu Wu; Lih-Wen Laih; Shiou-Ying Cheng; Wen-Chau Liu

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 800 KB
• Volume: 29
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2000.0960

✦ Synopsis

An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characteristics of the SE-RTBT. Common-emitter current gains up to 170 and 54 are obtained for the studied devices with emitter thicknesses of 800 Å and 150 Å, respectively. Based on the specified structure, the lower offset voltage and saturation voltage (≤1.5 V) are obtained. Experimentally, the device with a 5-period superlattice and an emitter thickness of 800 Å provides higher dc performance and stable temperature-dependent characteristics.