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Investigation of injection mechanisms for InGaAs/InP double heterostructure bipolar transistors

โœ Scribed by Aicha Elshabini-Riad; Jianqing He


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
734 KB
Volume
32
Category
Article
ISSN
0038-1101

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๐Ÿ“œ SIMILAR VOLUMES


Investigation of InP/InGaAs superlattice
โœ Wei-Chou Wang; Hsi-Jen Pan; Kun-Wei Lin; Kuo-Hui Yu; Cheng-Zu Wu; Lih-Wen Laih; ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 800 KB

An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte