Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications

✍ Scribed by Wen-Shiung Lour; Wen-Chau Liu; Chung-Yih Sun; Der-Feng Guo; Rong-Chau Liu

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 242 KB
• Volume: 13
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1993.1016

✦ Synopsis

A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the (\mathrm{i}-\mathrm{Al}{0.5} \mathrm{Ga}{0.5} \mathrm{As} / \mathrm{n}^{+}-\mathrm{GaAs}) superlattice is used as a reflection and resonant tunneling barrier. High emitter injection efficiency and hence high current gain are sustained. In the transistor operation, a current gain of 65 was obtained with double-negative differential resistance. The experimental processes and device D.C. performance were demonstrated first. Then a great number of circuit applications, i.e. frequency multiplier, multiple-valued logic, and parity bit generator, using the SE-RTBT and exhibiting reduced complexities will be discussed. Thus, the SE-RTBT offers strong potential for use in very high-speed and high density integrated circuits.