A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the \(\mathrm{i}-\mathrm{Al}_{0.5} \mathrm{Ga}_{0.5} \mathrm{As} / \mathrm{n}^{+}-\mathrm{GaAs}\) superlattice is used as
โฆ LIBER โฆ
A new resonant-tunneling bipolar transistor with triple-well emitter structure
โ Scribed by Wen-Chao Liu; Yeong-Shyang Lee; Der-Feng Guo
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 425 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0038-1101
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