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Low frequency noise characteristics of AlInAsInGaAs heterojunction bipolar transistors

✍ Scribed by Sheng-Lyang Jang; Way-Ming Chen; Hao-Hsiung Lin; Chao-Hsing Huang

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
783 KB
Volume
39
Category
Article
ISSN
0038-1101

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## Abstract The advantages of heterojunction bipolar transistors (HBTs) make them very promising for modern RF communication systems and therefore their noise performance becomes an important issue as well. A procedure for HBT noise modeling based on the neural network approach is presented in this