𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Low-current operation of high-speed InP/InGaAs heterojunction bipolar transistors

✍ Scribed by Hiroki Nakajima; Kenji Kurishima; Shoji Yamahata; Takashi Kobayashi; Yutaka Matsuoka

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
475 KB
Volume
39
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Raman characterization of an operating I
Raman characterization of an operating InAlAsβ€”InGaAsβ€”InP high electronic mobility transistor
✍ N. Matrullo; M. Constant; G. Sagon; R. Fauquembergue; A. Leroy πŸ“‚ Article πŸ“… 1995 πŸ› John Wiley and Sons 🌐 English βš– 475 KB

## Abstract Raman scattering was used to probe electronic properties in In‐based structures. First, Raman signatures of undoped and doped InAlAs and InGaAs bulk materials and Raman spectra of InAlAsβ€”InGaAs heterostructures were recorded. Raman scattering by coupled longitudinal optic phonons and tw