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Investigation of the high frequency noise figure reduction of SiGe heterojunction bipolar transistors using actualised physical models

✍ Scribed by S. Decoutere; J. Poortmans; L. Deferm; J. Nijs


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
555 KB
Volume
38
Category
Article
ISSN
0038-1101

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