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Noise modeling of heterojunction bipolar transistors using neural network approach

✍ Scribed by V. Marković; S. Prasad; A. Stoǐć

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
141 KB
Volume
49
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

The advantages of heterojunction bipolar transistors (HBTs) make them very promising for modern RF communication systems and therefore their noise performance becomes an important issue as well. A procedure for HBT noise modeling based on the neural network approach is presented in this paper. The proposed models are characterized by high accuracy and efficiency commonly requested for today's CAD techniques. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 852–854, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI.10.1002/mop.22275

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